solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sft __ __ __ __ scre ening 2 / __ = no screening tx = tx level txv = txv level s = s level lead bend 3 / 4 / __ = straight leads package 3 / /3 = to-3 0.060? pin voltage/family 2010 = 100v 2012 = 120v 2014 = 140v SFT2010 thru sft2014 200 amp 100 ? 140 volt high energy npn transistor features: ? bv cbo = 250 v min ? 600 watts power dissipation ? excellent soa curve ? es/b of 800mj ? gain of over 5 at 200a ? high reliability construction ? planar chip construction with low leakage and very fast switching ? tx, txv, s-level screening available 2 / - consult factory maximum ratings symbol value units collector ? emitter voltage SFT2010 sft2012 sft2014 v ceo 100 120 140 volts collector ? base voltage v cbo 250 volts emitter ? base voltage v ebo 8 volts collector current i c 200 amps base current i b 75 amps total device dissipation t c =50 o c derate above 50 oc p d 600 4 watts w/ oc operating & storage temperature t j & t stg -65 to +200 oc maximum thermal resistance (junction to case) r 0 jc 0.25 oc/w notes: *pulse test: pulse width = 300sec, duty cycle = 2% 1 / for ordering information, price, and availability contact factory. 2 / screening per mil-prf-19500. 3 / for package outlines contact factory. 4 / up and down bend configurations are available for ?m? (to-254) packages only. 5 / unless otherwise specified, all el ectrical characteristics @25oc. to-3 note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: tr0108a doc
solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 s sdi@ssdi-power.com * www.ssdi-power.com SFT2010 thru sft2014 electrical characteristics symbol min max units collector ? emitter breakdown voltage * (i c = 200 ma) SFT2010 sft2012 sft2014 bv ceo 100 120 140 ?? volts collector ? base breakdown voltage * (i c = 100 a) bv cbo 250 ?? volts emitter ? base breakdown voltage * (i e = 100 a) bv ebo 8 ?? volts collector cutoff current (v cb = 250 v) i cbo ?? 10 a emitter cutoff current (v eb = 7 v) i ebo ?? 10 a dc current gain * i c = 10 a, v ce = 2 v i c = 100 a, v ce = 5 v i c = 200 a, v ce = 5 v h fe 40 30 5 ?? ?? ?? collector-emitter saturation voltage * (i c = 120 a, i b = 12 a) (i c = 200 a, i b = 30 a) v ce (sat) ?? ?? 2.0 3.0 volts base-emitter saturation voltage * (i c = 120 a, i b = 12 a) v be (sat) ?? 2.2 volts current ? gain ? bandwidth product (i c = 1.0 a, v ce = 10 v, f = 10mhz) f t 30 ?? mhz output capacitance v cb = 10 v, i e = 0, f = 1.0mhz c ob ?? 1200 pf rb soa i b = 1 a, r b1 = r b2 = 20 ohms v be(off) = 2.0 v, l = 1.0 mh e s/b 800 ?? mj fb soa v ce = 20 v, i c = 30 a v ce = 100 v, i c = 0.75 a i s/b 1 1 ?? ?? sec on time t (on) ?? 800 ns storage time t s ?? 1500 ns fall time (v cc = 60 v, i c = 10 a , i b1 = i b2 = 1.0 a) t f ?? 400 ns 1.197 1.177 ?.875 max 2x .063 .057 .675 .655 .525 max .135 max .440 .420 2x .225 .205 .450 .250 2x .312 min 2x ? .165 .151 2x r.188 max 1 seating plane 2 1 notes: this dimension shall be measured at points .050 - .055" below the seating plane. when gage is not used, measurement will be made at seating plane. this outline does not meet the minimum criteria established by js-10 for registration. 1 pin assignment (standard) package collector emitter base to-3 (/3) case pin 2 pin 1 available part numbers: SFT2010/3 sft2012/3 sft2014/3 note: all specifications are subject to change without notification. scd's for these devices should be re viewed by ssdi prior to release. data sheet #: tr0108a doc
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